工作内容与条件: 1. Familiar with semiconductor advanced logic processes, architecture and device physics. 熟悉半导体先进逻辑工艺制程, 结构及器件物理. 2. More than 3 years hands-on experiences in advanced logic process integration and/or device development. 具备三年以上先进逻辑工艺整合或器件的技术研发经验。 3. Strong track record of process development, characterization and trouble-shooting skills. 较强的工艺研发，表征和解决问题的能力。 4. Strong hands-on experiences in logic circuit/device electrical data collection and analysis, and process variation control, etc. 在逻辑电路/器件相关的电信号收集、数据分析、和工艺不稳定造成的信号变化的控制等方面，具备丰富的经验。 5. Good familiarity of advanced logic design rules, test key design, SPC, DOE, in-line/off-line soft wares, etc. 熟悉先进逻辑设计规则, 测试图形, SPC, DOE, 以及线上、线下的一些数据收集/分析软件等。 6. Good team player, strong communication and coordination skills. 具备团队合作精神，和有较强的交流及协调技能。

HFC focuses on the development of the cutting-edge magnetoresistive random access memory (MRAM) technology for both stand-alone and embedded applications, with the joint development partnership with the world-renowned industrial institute. HFC plans to build the full MRAM production capacity within the next few years, and becomes the key player in this critical emerging NVM technology.